Room temperature formation of Hf-silicate layer by pulsed laser deposition with Hf-Si-O ternary reaction control
نویسندگان
چکیده
منابع مشابه
Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition
The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 cm−1 originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the HfO2/SiO2 interface af...
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The Hf-O system has been modeled by combining existing experimental data and first-principles calculations results through the CALPHAD approach. Special quasirandom structures of α and β hafnium were generated to calculate the mixing behavior of oxygen and vacancies. For the total energy of oxygen, vibrational, rotational and translational degrees of freedom were considered. The Hf-O system was...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4964932